Mechanism of electron-beam doping in semiconductors
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.53.4770/fulltext
Reference38 articles.
1. Displacement of the Sulfur Atom in CdS by Electron Bombardment
2. Electron‐Beam Plasma‐Doping Process
3. U-shaped diffusion profiles of impurities in semiconductors by electron-beam doping
4. Electron-beam doping-electron radiation effects in impurity overlayers and semiconductor substrates
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