Excitonic properties in (111)B-grown (In,Ga)As/GaAs piezoelectric multiple quantum wells
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.56.15202/fulltext
Reference31 articles.
1. Strain-generated electric fields in [111] growth axis strained-layer superlattices
2. Critical layer thickness on (111)B‐oriented InGaAs/GaAs heteroepitaxy
3. Observation of room‐temperature blue shift and bistability in a strained InGaAs‐GaAs 〈111〉 self‐electro‐optic effect device
4. Strained InGaAs quantum well lasers grown on (111)B GaAs
5. Tailoring of internal fields in InGaAs/GaAs multiwell structures grown on (111)B GaAs
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1. CHALLENGES IN APPLICATION OF A MONTE CARLO METHOD TO STUDY AN EXCITON CONFINED IN AlGaAs/GaAs SINGLE QUANTUM WELL;International Journal of Modern Physics B;2012-08-13
2. First- and second-order piezoelectricity in III-V semiconductors;Physical Review B;2011-11-28
3. Temperature dependence of excitonic properties of (111)B InGaAs/GaAs piezoelectric and pyroelectric multiquantum wells;Journal of Applied Physics;2009-07-15
4. Variational calculation for the direct-gap exciton in the Ge quantum well systems;Physical Review B;2009-06-25
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