Topographic evolution during deposition of plasma-deposited hydrogenated silicon on glass
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.72.205305/fulltext
Reference29 articles.
1. Fractal Concepts in Surface Growth
2. Surface transport kinetics in low-temperature silicon deposition determined from topography evolution
3. Surface Roughness Evolution of PECVD Cathodic and Anodic a-Si:H.
4. Growth mechanism of hydrogenated amorphous silicon studied by in situ scanning tunneling microscopy
5. Morphological study of kinetic roughening on amorphous and microcrystalline silicon surface
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