Effective phonon bottleneck in the carrier thermalization of InAs/GaAs quantum dots-Reference-Cited by-同舟云学术

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Effective phonon bottleneck in the carrier thermalization of InAs/GaAs quantum dots

Published:2008-08-20 Issue:8 Volume:78 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Sanguinetti S.,Guzzi M.,Grilli E.,Gurioli M.,Seravalli L.,Frigeri P.,Franchi S.,Capizzi M.,Mazzuccato S.,Polimeni A.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.78.085313/fulltext

Reference33 articles.

1. Intrinsic mechanism for the poor luminescence properties of quantum-box systems

2. Defect-assisted relaxation in quantum dots at low temperature

3. Energy relaxation by multiphonon processes in InAs/GaAs quantum dots

4. Efficient Carrier Relaxation Mechanism in InGaAs/GaAs Self-Assembled Quantum Dots Based on the Existence of Continuum States

5. Phonon-assisted capture and intradot Auger relaxation in quantum dots

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4. Theoretical Study on Vertically Coupled Stranski-Krastanov (SK) on Sub Monolayer (SML) InAs Quantum Dot Heterostructures Employing Ternary and Quaternary Barrier Materials;IEEE Transactions on Nanotechnology;2023

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