Method to quantify the delocalization of electronic states in amorphous semiconductors and its application to assessing charge carrier mobility of p -type amorphous oxide semiconductors-Reference-Cited by-同舟云学术

Method to quantify the delocalization of electronic states in amorphous semiconductors and its application to assessing charge carrier mobility of p -type amorphous oxide semiconductors

Published:2018-01-25 Issue:4 Volume:97 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

de Jamblinne de Meux A.,Pourtois G.,Genoe J.,Heremans P.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.97.045208/fulltext

Reference46 articles.

1. Recent progress in high performance and reliable n-type transition metal oxide-based thin film transistors

2. Review of recent developments in amorphous oxide semiconductor thin-film transistor devices

3. Copper(I)-Based p-Type Oxides for Photoelectrochemical and Photovoltaic Solar Energy Conversion

4. Recent Developments in p-Type Oxide Semiconductor Materials and Devices

5. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

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