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Identification of the main contributions to the conductivity of epitaxial InN

  • Published:2011-07-26 Issue:3 Volume:84 Page:
  • ISSN:1098-0121
  • Container-title:Physical Review B
  • language:en
  • Short-container-title:Phys. Rev. B

Author:

Komissarova T. A.,Jmerik V. N.,Ivanov S. V.,Drachenko O.,Wang X.,Yoshikawa A.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Plasma-Assisted Molecular Beam Epitaxy of In-Rich InGaN: Growth Optimization for Near-IR Lasing;ECS Journal of Solid State Science and Technology;2022-01-01

2. Intermediates in Ammonothermal Synthesis and Crystal Growth;Ammonothermal Synthesis and Crystal Growth of Nitrides;2021

3. Correlation of Threading Dislocations with the Electron Concentration and Mobility in InN Heteroepitaxial Layers Grown by MBE;ECS Journal of Solid State Science and Technology;2019-10-11

4. Puzzle of non-surface related 2D electron gas in n-InN epitaxial samples;Journal of Applied Physics;2019-07-28

5. Ammonothermal Crystal Growth of Indium Nitride;Crystal Growth & Design;2018-02-09
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