Silicon vacancy containing two hydrogen atoms studied with electron paramagnetic resonance and infrared absorption spectroscopy
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.66.235201/fulltext
Reference20 articles.
1. SiH stretch modes of hydrogen — vacancy defects in silicon
2. Identification of the Silicon Vacancy Containing a Single Hydrogen Atom by EPR
3. Defects in Irradiated Silicon: Electron Paramagnetic Resonance and Electron-Nuclear Double Resonance of the Si-ECenter
4. Defects in Irradiated Silicon. I. Electron Spin Resonance of the Si-ACenter
5. Electron Paramagnetic Resonance of the Neutral (S=1) One- Vacancy-Oxygen Center in Irradiated Silicon
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