Void Formation in Hydrogen Implanted and Subsequently Plasma Hydrogenated and Annealed Czochralski Silicon

Abstract

AbstractBy μ-Raman spectroscopy the formation of hydrogen related defects (vacancy-hydrogencomplexes, hydrogen saturated silicon dangling bonds, H2 molecules in multi-vacancies andvoids/platelets) has been investigated in H-implanted and subsequently H-plasma exposed andannealed Czochralski (Cz) silicon wafers. Annealing was done either in air or in an ambientcontaining hydrogen (forming gas). The investigations were applied under conditions, which arerelevant for ion-cut processes and layer exfoliation in Cz Si for SOI-wafer fabrication at reducedimplantation doses (as compared to standard procedures like the smart-cut® process).