Free carriers's effective mass and relaxation-time analysis by high-pulsed-field Faraday oscillations in III-V compounds
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.13.2576/fulltext
Reference24 articles.
1. The Faraday effect in semiconductors
2. Determination of the Effective Electron Mass in GaAs by the Infra-Red Faraday Effect
3. Faraday Effect in Germanium at Room Temperature
4. The energy-dependence of electron mass in indium antimonide determined from measurements of the infrared Faraday effect
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2. An accurate expression for the generalized fermi-dirac integral derived from a kane nonparabolic relation and its reversion. An applicationto n-type degenerate gaas crystals;physica status solidi (b);1996-07-01
3. Analysis of band bending at III–V semiconductor interfaces by Raman spectroscopy;Surface Science Reports;1993-09
4. Raman scattering by the coupled plasmon–LO-phonon modes near theE0+Δ0gap ofn-type GaAs: Resonance and interference effects;Physical Review B;1990-09-15
5. Light scattering by free carrier excitations in semiconductors;Topics in Applied Physics;1984
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