Electronic structure of hydrogenated-fluorinateda-Si1−xGexalloys
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.36.2799/fulltext
Reference16 articles.
1. GeSi alloys: A study of short-range order
2. Erratum: GeSi alloys: A study of short-range order
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Electronic structure of defect complexes in crystalline and amorphous GaAs;Philosophical Magazine B;1991-03
2. Electronic structure of defects and impurities in a-Si;Journal of Physics: Condensed Matter;1990-08-06
3. Vibrational excitations ina-Si1−xCx:H alloys;Physical Review B;1989-04-15
4. Vibrational excitations in a-Si3N4:H(D) alloys;Journal of Physics C: Solid State Physics;1988-06-30
5. Vibrational excitations ina-Si1−xGex:F,a-Si1−xGex:H, andGa1−xAlxAs alloys;Physical Review B;1988-06-15
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