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Symmetry-dependent phonon renormalization in monolayer MoS2transistor

Published:2012-04-06 Issue:16 Volume:85 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Chakraborty Biswanath,Bera Achintya,Muthu D. V. S.,Bhowmick Somnath,Waghmare U. V.,Sood A. K.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.85.161403/fulltext

Reference28 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Graphene nano-ribbon electronics

3. Oxygen Surface Functionalization of Graphene Nanoribbons for Transport Gap Engineering

4. Gate-induced insulating state in bilayer graphene devices

5. The formation of a p–n junction in a polymer electrolyte top-gated bilayer graphene transistor

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