Determination of the band-gap decrease in doped Ge and Si from drop properties
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.13.3661/fulltext
Reference21 articles.
1. Theory of the Band Structure of Very Degenerate Semiconductors
2. Properties of Spontaneous and Stimulated Emission in GaAs Junction Lasers. I. Densities of States in the Active Regions
3. Optical Absorption Edge of Heavily Doped Semiconductors at Low Temperatures
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1. Impurity Effects on Strain-Confined Electron-Hole Liquid in Germanium I. Photoluminescence Studies on Recombination Dynamics;Journal of the Physical Society of Japan;1987-12-15
2. Band-gap narrowing in heavily doped many-valley semiconductors;Physical Review B;1981-08-15
3. Heavy-doping effects in silicon: The role of Auger processes;Solar Cells;1981-07
4. Electron–hole liquid in GaP the influence of the isoelectronic impurity nitrogen;Physica Status Solidi (b);1979-10-01
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