Heavy-doping effects in silicon: The role of Auger processes-Reference-Cited by-同舟云学术

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Heavy-doping effects in silicon: The role of Auger processes

Published:1981-07 Issue:4 Volume:3 Page:313-326
ISSN:0379-6787
Container-title:Solar Cells
language:en
Short-container-title:Solar Cells

Author:

Redfield David

Publisher

Elsevier BV

Subject

General Engineering

Reference39 articles.

1. A methodology for experimentally based determination of gap shrinkage and effective lifetimes in the emitter and base of p-n junction solar cells and other p-n junction devices

2. Mechanism of performance limitations in heavily doped silicon devices

3. The physics of heavily doped n+-p junction solar cells

4. Solid State and Semiconductor Physics;McKelvey,1966

5. Proc. 9th Photovoltaic Specialists' Conf.;Brandhorst,1972

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2. Materials Chemistry and Physics for Low‐Cost Silicon Photovoltaics;Emerging Photovoltaic Materials;2018-12-03

3. Analytical determination of the emitter saturation current in ultra-shallow silicon junctions;International Journal of Electronics;1990-05

4. Analysis of ‘anomalous’ I- V characteristics of silicon p+-n-n+photodiodes fabricated by boron implant through SiO2layers;International Journal of Electronics;1989-02

5. Analysis of electric field distributions in ultra-shallow silicon junctions under thermodynamic equilibrium conditions;International Journal of Electronics;1987-10

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