Defect properties of ion-implanted nitrogen in ZnSe-Reference-Cited by-同舟云学术

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Defect properties of ion-implanted nitrogen in ZnSe

Published:2001-06-08 Issue:24 Volume:63 Page:
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Marbach K.,Ittermann B.,Füllgrabe M.,Heemeier M.,Kroll F.,Mai F.,Meier P.,Peters D.,Thieß H.,Ackermann H.,Stöckmann H.-J.,Zeitz W.-D.,Wenisch H.,Hommel D.,Landwehr G.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.63.241201/fulltext

Reference18 articles.

1. p‐type ZnSe by nitrogen atom beam doping during molecular beam epitaxial growth

2. Doping of nitrogen acceptors into ZnSe using a radical beam during MBE growth

3. Heavily dopedp‐ZnSe:N grown by molecular beam epitaxy

4. Lattice location of N atoms in heavily N-doped ZnSe studied with ion beam analysis and its implication on deep level defects

5. Fundamental studies on compensation mechanisms in II–VI compounds

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Cross-relaxation of 8Li+ in copper;Physica B: Condensed Matter;2009-04

2. Development of the 8Li cross-relaxation technique: Applications in semiconductors and other condensed matter systems;Physica B: Condensed Matter;2007-12

3. The effect of nitrogen ion implantation on the structural, optical and electrical properties of ZnSe thin films;Semiconductor Science and Technology;2006-10-18

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