Dopant effect on intrinsic diffusivity in nickel silicide
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.38.8121/fulltext
Reference14 articles.
1. Low-temperature diffusion of dopant atoms in silicon during interfacial silicide formation
2. Structure and growth kinetics of RhSi on single crystal, polycrystalline, and amorphous silicon substrates
3. Structure and growth kinetics of Ni2Si on silicon
4. Solute effect of Cu on interdiffusion inAl3Ti compound films
5. A simple analysis of inert marker motion in a single compound layer for solid‐phase epitaxy and for binary diffusion couples
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1. Redistribution of phosphorus during Ni0.9Pt0.1-based silicide formation on phosphorus implanted Si substrates;Journal of Applied Physics;2018-02-28
2. Role of the early stages of Ni-Si interaction on the structural properties of the reaction products;Journal of Applied Physics;2013-09-28
3. Nucleation and growth of NiSi from Ni2Si transrotational domains;Applied Physics Letters;2007-01-29
4. On the oxidation behaviour of MoSi2;Intermetallics;2001-02
5. Effects of electric field on silicide formation;Applied Surface Science;1997-06
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