Analysis of InAs(001) surfaces by reflectance anisotropy spectroscopy
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.64.193301/fulltext
Reference34 articles.
1. Optical reflectance and electron diffraction studies of molecular-beam-epitaxy growth transients on GaAs(001)
2. Reflectance-difference spectroscopy of (001) GaAs surfaces in ultrahigh vacuum
3. Optical in situ surface control during MOVPE and MBE growth
4. Reflectance–difference studies of organometallic chemical vapor deposition growth transients on (001) GaAs
5. Thermal desorption of amorphous arsenic caps from GaAs(100) monitored by reflection anisotropy spectroscopy
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