Structural and electronic transitions inGe2Sb2Te5induced by ion irradiation damage-Reference-Cited by-同舟云学术

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Structural and electronic transitions inGe2Sb2Te5induced by ion irradiation damage

Published:2016-09-06 Issue:9 Volume:94 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Privitera S. M. S.,Mio A. M.,Smecca E.,Alberti A.,Zhang W.,Mazzarello R.,Benke J.,Persch C.,La Via F.,Rimini E.

Funder

Deutsche Forschungsgemeinschaft

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.94.094103/fulltext

Reference35 articles.

1. Reversible Electrical Switching Phenomena in Disordered Structures

2. Phase change memory technology

3. Nano-scaled chalcogenide-based memories

4. Rapid‐phase transitions of GeTe‐Sb2Te3pseudobinary amorphous thin films for an optical disk memory

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1. Reversible Crystalline‐Crystalline Transitions in Chalcogenide Phase‐Change Materials;Advanced Functional Materials;2024-07-16

2. Comparable Study on Proton Radiation Effects for Amorphous and Crystalline Ge₂Sb₂Te₅;IEEE Transactions on Nuclear Science;2024-06

3. Configuring phase-change materials for photonics;Phase Change Materials-Based Photonic Computing;2024

4. Tunable metasurfaces enabled by phase-change materials;Semiconductors and Semimetals;2024

5. Clustering in gallium ion beam sputtered compound materials driven by bond strength and interstitial/vacancy reaction;Applied Physics Letters;2023-09-04

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