Solid-phase epitaxy induced by low-power pulsed-laser annealing of III-V compound semiconductors
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.53.4757/fulltext
Reference30 articles.
1. Transient annealing for the production of n+ contact layers in GaAs
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3. The evaporation of GaAs under equilibrium and non-equilibrium conditions using a modulated beam technique
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