Re-examination of the SiGe Raman spectra: Percolation/one-dimensional-cluster scheme andab initiocalculations-Reference-Cited by-同舟云学术

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Re-examination of the SiGe Raman spectra: Percolation/one-dimensional-cluster scheme andab initiocalculations

Published:2012-07-05 Issue:4 Volume:86 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Pagès O.,Souhabi J.,Torres V. J. B.,Postnikov A. V.,Rustagi K. C.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.86.045201/fulltext

Reference61 articles.

1. Elastic Properties of ZnS Structure Semiconductors

2. Anharmonic Keating model for group-IV semiconductors with application to the lattice dynamics in alloys of Si, Ge, and C

3. Totally relaxed GexSi1−xlayers with low threading dislocation densities grown on Si substrates

4. Hole mobility enhancements in nanometer-scale strained-silicon heterostructures grown on Ge-rich relaxed Si1−xGex

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1. Determination of Ge-fraction-shift coefficients for Raman spectroscopy in all vibration modes investigated by single-crystalline bulk SiGe and its application to strain evaluation in SiGe film grown on substrate;Japanese Journal of Applied Physics;2024-03-01

2. Local thermal conductivity properties of a SiGe nanowire observed by laser power sweep Raman spectroscopy;Japanese Journal of Applied Physics;2024-01-25

3. Temperature Dependence of Raman Peak Shift in Single-Crystalline Silicon-Germanium;ECS Journal of Solid State Science and Technology;2023-06-01

4. Potential of hydrogenated microcrystalline silicon-germanium for low thermal budget near infrared sensors;Physics and Simulation of Optoelectronic Devices XXXI;2023-03-10

5. Applications of Raman, IR, and CL Spectroscopy;Advanced Optical Spectroscopy Techniques for Semiconductors;2023

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