Hole mobility enhancements in nanometer-scale strained-silicon heterostructures grown on Ge-rich relaxed Si1−xGex
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1590052
Reference23 articles.
1. Totally relaxed GexSi1−xlayers with low threading dislocation densities grown on Si substrates
2. Relaxed GexSi1−x structures for III–V integration with Si and high mobility two-dimensional electron gases in Si
3. Electron mobility enhancement in strained-Si n-type metal-oxide-semiconductor field-effect transistors
4. High‐mobilityp‐channel metal‐oxide‐semiconductor field‐effect transistor on strained Si
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