Hole scattering and optical transitions in wide-band-gap nitrides: Wurtzite and zinc-blende structures
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.55.4360/fulltext
Reference103 articles.
1. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
2. Progress and prospects for GaN and the III–V nitride semiconductors
3. III-V nitrides for electronic and optoelectronic applications
4. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
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