Pressure-Dependent Photoluminescence Study of Wurtzite InP Nanowires-Reference-Cited by-同舟云学术

Pressure-Dependent Photoluminescence Study of Wurtzite InP Nanowires

Published:2016-04-12 Issue:5 Volume:16 Page:2926-2930
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Chauvin Nicolas¹,Mavel Amaury¹²,Patriarche Gilles³,Masenelli Bruno¹,Gendry Michel²,Machon Denis⁴

Affiliation:

1. Institut des Nanotechnologies de Lyon (INL)-UMR5270-CNRS, Université de Lyon, INSA-Lyon, 7 avenue Jean Capelle, 69621 Villeurbanne, France

2. Institut des Nanotechnologies de Lyon (INL)-UMR5270-CNRS, Université de Lyon, Ecole Centrale de Lyon, 36 avenue Guy de Collongue, 69134 Ecully, France

3. Laboratoire de Photonique et de Nanostructures (LPN), CNRS, Université Paris-Saclay, route de Nozay, F-91460 Marcoussis, France

4. Institut Lumière Matière, UMR 5306 Université Lyon 1-CNRS, Université de Lyon 69622 Villeurbanne cedex, France

Funder

Agence Nationale de la Recherche

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.5b04646

Reference36 articles.

1. InP Nanowire Array Solar Cells Achieving 13.8% Efficiency by Exceeding the Ray Optics Limit

2. Polytypic InP Nanolaser Monolithically Integrated on (001) Silicon

3. Far-Field Emission Patterns of Nanowire Light-Emitting Diodes

4. Structure, energetics, and electronic states of III–V compound polytypes

5. Optical dielectric functions of wurtzite III-V semiconductors

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