Magnetic-resonance studies of tellurium-dopedAlxGa1−xAs
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.50.2645/fulltext
Reference17 articles.
1. Deep donor levels (DXcenters) in III‐V semiconductors
2. Theory of the Atomic and Electronic Structure ofDXCenters in GaAs andAlxGa1−xAsAlloys
3. Energetics ofDX-center formation in GaAs andAlxGa1−xAs alloys
4. Photoionization of theDX(Te) centers inAlxGa1−xAs: Evidence for a negative-Ucharacter of the defect
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