Gate-induced gap in bilayer graphene suppressed by Coulomb repulsion-Reference-Cited by-同舟云学术

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Gate-induced gap in bilayer graphene suppressed by Coulomb repulsion

Published:2016-01-11 Issue:3 Volume:93 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Xu Jin-Rong,Song Ze-Yi,Lin Hai-Qing,Zhang Yu-Zhong

Funder

National Natural Science Foundation of China

Program for New Century Excellent Talents in University

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.93.035109/fulltext

Reference47 articles.

1. The electronic properties of graphene

2. The electronic properties of bilayer graphene

3. Unconventional quantum Hall effect and Berry’s phase of 2π in bilayer graphene

4. Controlling the Electronic Structure of Bilayer Graphene

5. Gate-induced insulating state in bilayer graphene devices

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5. Tight-binding model for electronic structure of hexagonal boron phosphide monolayer and bilayer;Journal of Physics: Condensed Matter;2019-04-29

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