Luminescence decays of N-bound excitons inGsAs1−xPx
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.27.2294/fulltext
Reference25 articles.
1. Band structure enhancement and optimization of radiative recombination in GaAs1−x Px:N (and In1−x Gax P:N)
2. Radiative recombination efficiencies in Ga(As,P) : N and (In,Ga)P : N
3. Direct experimental observation of band‐structure effects in GaPxAs1−x : N alloys by radiative lifetime measurements
4. Lifetime spectra (77 °K) of nitrogen−doped GaAs1−xPx
5. Electron‐hole recombination in nitrogen‐doped direct‐band‐gap GaAs1−xPx
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