Radiative recombination efficiencies in Ga(As,P) : N and (In,Ga)P : N
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.322342
Reference32 articles.
1. Photoluminescence Associated with Multivalley Resonant Impurity States above the Fundamental Band Edge: N Isoelectronic Traps inGaAs1−xPx
2. Photoluminescence Associated with Multivalley Resonant States of the N Isoelectronic Trap inIn1−xGaxP
3. Resonant enhancement of the recombination probability associated with isoelectronic trap states in semiconductor alloys: In1−xGaxP:N laser operation (77 °K) in the yellow‐green (λ≲5560 Å, ℏ ω≳2.23 eV)
4. Toward a Theory of Isoelectronic Impurities in Semiconductors
5. The Effect of Nitrogen Doping on GaAs1−xPx Electroluminescent Diodes
Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Excess carrier recombination in indirect-gap GaAs1−xPx:N;Physica Status Solidi (a);1988-11-16
2. Minority Carrier Lifetime Measurements by Photoluminescence at Room Temperature in GaAs1−x, Px:N, Te (x ≥ 0.70);Physica Status Solidi (a);1984-02-16
3. Dynamics of intrinsic and nitrogen-induced exciton emission in indirect-gapGa1−xAlxAs;Physical Review B;1983-02-15
4. Luminescence decays of N-bound excitons inGsAs1−xPx;Physical Review B;1983-02-15
5. Nitrogen states in Ga(As,P) and the long-range, short-range model: A systematic study;Physical Review B;1980-04-15
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