Structure of the silicon vacancy in6H−SiCafter annealing identified as the carbon vacancy–carbon antisite pair
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.64.245212/fulltext
Reference34 articles.
1. SiC Integrated MOSFETs
2. Compensation implants in 6H–SiC
3. Point defects in silicon carbide
4. Radiation induced defects in CVD-grown 3C-SiC
5. Silicon vacancy related defect in 4H and 6H SiC
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