Compensation independence of anomalous metal-semiconductor tunneling near the Mott transition
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.12.1603/fulltext
Reference20 articles.
1. Anomalous Metal-Semiconductor Tunneling Near the Mott Transition
2. Effects of Uniaxial Compression on the Zero-Bias Anomaly inp-Silicon Schottky-Barrier Tunnel Junctions
3. Application of Gutzwiller's Variational Method to the Metal-Insulator Transition
4. The metal-insulator transition in extrinsic semiconductors
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