Anomalous Metal-Semiconductor Tunneling Near the Mott Transition
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.26.438/fulltext
Reference15 articles.
1. Semiconductor-to-Metal Transition inn-Type Group IV Semiconductors
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1. Magnetic field variation of tunnelling gap between disordered two-dimensional electron systems;Physica E: Low-dimensional Systems and Nanostructures;2000-02
2. Coulomb gap in a doped semiconductor near the metal-insulator transition: Tunneling experiment and scaling ansatz;Physical Review B;1999-07-15
3. Electron Tunneling Study of Coulomb Correlations across the Metal-Isulator Transition in Si:B;Physical Review Letters;1996-10-14
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