Electronic structure of hydrogenated fluorinated amorphous GaAs alloys
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.34.4167/fulltext
Reference12 articles.
1. Electronic Properties of an Amorphous Solid. I. A Simple Tight-Binding Theory
2. Existence of a Gap in the Electronic Density of States of a Tetrahedrally Bonded Solid of Arbitrary Structure
3. "Cluster—Bethe-lattice" method: The electronic density of states of heteropolar systems
4. "Cluster-Bethe-lattice" method: Electronic density of states of amorphous and crystalline homopolar solids
5. Vibrational Excitations ina-Si: F anda-Si: (F,H) Alloys
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effects of chemical and structural disorder in III-V semiconductors and their alloys;Journal of Physics: Condensed Matter;1989-07-24
2. Electronic structure of hydrogenated-fluorinateda-Si1−xGexalloys;Physical Review B;1987-08-15
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