Breathing-mode lattice relaxation accompanying emission and capture by deep electronic levels in silicon
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.39.11001/fulltext
Reference31 articles.
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2. The long-term annealing of the cluster damage in high resistivity n-type silicon;IEEE Transactions on Nuclear Science;2002-10
3. Breathing-mode relaxation associated with electron emission and capture processes ofEL2 in GaAs;Physical Review Letters;1992-03-09
4. Deep electronic levels at growth interrupted interfaces in low‐temperature‐grown GaAs and the pressure dependence of these levels;Journal of Applied Physics;1992-02-15
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