Dielectric properties of single-crystalTiSi2from 0.6 to 20 eV
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.43.9133/fulltext
Reference17 articles.
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1. IR permittivities for silicides and doped silicon;Journal of the Optical Society of America B;2010-03-23
2. Rapid Thermal Processing;Handbook of Semiconductor Manufacturing Technology, Second Edition;2007-07-09
3. Tracing the Ti-silicide formation by in situ ellipsometric measurements;Materials Science in Semiconductor Processing;2003-02
4. Ti-silicide formation during isochronal annealing followed by in situ ellipsometry;Microelectronic Engineering;2001-03
5. Fundamental Electronic and Optical Properties;Semiconducting Silicides;2000
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