Self-doping behavior and cation disorder in MgSnN2
Author:
Funder
Deutsche Forschungsgemeinschaft
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.105.125202/fulltext
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4. Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE
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