Alloy broadening of the deep electronic levels associated with the As vacancy inAlxGa1−xAs-Reference-Cited by-同舟云学术

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Alloy broadening of the deep electronic levels associated with the As vacancy inAlxGa1−xAs

Published:1988-07-15 Issue:2 Volume:38 Page:1210-1214
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Ford William C.,Myles Charles W.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.38.1210/fulltext

Reference36 articles.

1. Theory of alloy broadening of deep levels in semiconductor alloys: Nitrogen inAlxGa1−xAs

2. Theory of Substitutional Deep Traps in Covalent Semiconductors

3. Pressure-Temperature Phase Diagrams of Ferroelectric {N(CH3)4}2CoCl4 and {N(CH3)4}2ZnCl4

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1. Spontaneous Alloy Composition Ordering in GaAs-AlGaAs Core–Shell Nanowires;Nano Letters;2013-03-27

2. Deep levels including lattice relaxation: first- and second-neighbor effects;Journal of Physics and Chemistry of Solids;2000-11

3. Electron states at point defects in non-uniform semiconductor alloys;Journal of Physics: Condensed Matter;1997-01-20

4. Photoluminescence of AlxGa1−xAs alloys;Journal of Applied Physics;1994-05-15

5. Alloy composition dependence of defect energy levels in GaxIn1−xP/InP:Fe and GaxIn1−xP/InP:S (x≤0.24);Journal of Applied Physics;1993-08

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