Electron tunnel rates in a donor-silicon single electron transistor hybrid-Reference-Cited by-同舟云学术

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Electron tunnel rates in a donor-silicon single electron transistor hybrid

Published:2010-06-15 Issue:23 Volume:81 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Huebl Hans,Nugroho Christopher D.,Morello Andrea,Escott Christopher C.,Eriksson Mark A.,Yang Changyi,Jamieson David N.,Clark Robert G.,Dzurak Andrew S.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.81.235318/fulltext

Reference24 articles.

1. A silicon-based nuclear spin quantum computer

2. Recipes for spin-based quantum computing

3. Single-shot read-out of an individual electron spin in a quantum dot

4. Rapid Single-Shot Measurement of a Singlet-Triplet Qubit

5. Single-Shot Readout of Electron Spin States in a Quantum Dot Using Spin-Dependent Tunnel Rates

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Donor-based qubits for quantum computing in silicon;Applied Physics Reviews;2021-09

2. Detuning Axis Pulsed Spectroscopy of Valley-Orbital States in Si / Si - Ge Quantum Dots;Physical Review Applied;2021-04-21

3. Lifting of spin blockade by charged impurities in Si-MOS double quantum dot devices;Physical Review B;2020-04-09

4. Fast Hole Tunneling Times in Germanium Hut Wires Probed by Single-Shot Reflectometry;Nano Letters;2017-08-21

5. Nanosilicon for quantum information;Silicon Nanomaterials Sourcebook;2017-08-04

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