Divacancy and resistivity profiles in n-type Si implanted with 1.15-MeV protons
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.55.9598/fulltext
Reference34 articles.
1. Production of Fast Switching Power Thyristors by Proton Irradiation
2. Proton irradiation of silicon: Complete electrical characterization of the induced recombination centers
3. Hydrogen interactions with defects in crystalline solids
4. Hydrogen in crystalline semiconductors
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