<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>α</mml:mi><mml:mo>−</mml:mo><mml:msub><mml:mi>As</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi>Te</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math> as a platform for the exploration of the electronic band structure of single layer <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>β</mml:mi><mml:mrow><mml:mo>−</mml:mo><mml:mi>tellurene</mml:mi></mml:mrow></mml:mrow></mml:math>-Reference-Cited by-同舟云学术

α−As2Te3 as a platform for the exploration of the electronic band structure of single layer β−tellurene

Published:2022-09-30 Issue:12 Volume:106 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Khalil Lama,Forcella Pietro Maria^ORCID,Kremer Geoffroy^ORCID,Bisti Federico^ORCID,Chaste Julien,Girard Jean-Christophe,Oehler Fabrice,Pala Marco,Dayen Jean-Francois,Logoteta Demetrio,Goerbig Mark,Bertran François^ORCID,Le Fèvre Patrick,Lhuillier Emmanuel,Rault Julien,Pierucci Debora^ORCID,Profeta Gianni,Ouerghi Abdelkarim

Funder

Agence Nationale de la Recherche

Ministero dell’Istruzione, dell’Università e della Ricerca

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.106.125152/fulltext

Reference31 articles.

1. First principles investigation of electronic, optical and transport properties of α- and β-phase of arsenic telluride

2. Polymorphism in Thermoelectric As2Te3

3. Electronic band gap of van der Waals α-As2Te3 crystals

4. Unveiling the role of the lone electron pair in sesquioxides at high pressure: compressibility of β-Sb2O3

5. The crystal structure and powder data for arsenic telluride

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3. Quasi van der Waals Epitaxy of Rhombohedral-Stacked Bilayer WSe₂ on GaP(111) Heterostructure;ACS Nano;2023-10-19

4. α−As2Te3 as a platform for the exploration of the electronic band structure of single layer β−tellurene;Physical Review B;2022-09-30