Enhancing the optoelectronic properties of amorphous zinc tin oxide by subgap defect passivation: A theoretical and experimental demonstration-Reference-Cited by-同舟云学术

Enhancing the optoelectronic properties of amorphous zinc tin oxide by subgap defect passivation: A theoretical and experimental demonstration

Published:2017-06-09 Issue:24 Volume:95 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Rucavado Esteban,Jeangros Quentin,Urban Daniel F.,Holovský Jakub,Remes Zdenek,Duchamp Martial,Landucci Federica,Dunin-Borkowski Rafal E.,Körner Wolfgang,Elsässer Christian,Hessler-Wyser Aïcha,Morales-Masis Monica,Ballif Christophe

Funder

Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung

Seventh Framework Programme

Grantová Agentura České Republiky

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.95.245204/fulltext

Reference68 articles.

1. Thin-Film Silicon Solar Cells

2. Optical properties and electronic structure of amorphous Ge and Si

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4. Correlation between oxygen stoichiometry, structure, and opto-electrical properties in amorphous In2O3:H films

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