Correlation between oxygen stoichiometry, structure, and opto-electrical properties in amorphous In2O3:H films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3696978
Reference48 articles.
1. Low resistivity indium–tin oxide transparent conductive films. I. Effect of introducing H2O gas or H2 gas during direct current magnetron sputtering
2. Doping mechanisms of tin‐doped indium oxide films
3. Roles of bonded hydrogens and oxygen vacancies on crystallization of hydrogenated amorphous indium tin oxide (a-ITO:H) films
4. Effect of process parameters on the characteristics of indium tin oxide thin film for flat panel display application
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3. Radio-frequency magnetron sputtering deposition process for In2O3:H transparent conductive oxide films for application in Cu(In,Ga)Se2 solar cells;Thin Solid Films;2023-06
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