Photoinduced recovery of photoquenched hopping conduction in neutron-irradiated semi-insulating GaAs
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.45.6251/fulltext
Reference20 articles.
1. Quenching phenomenon of hopping conduction in neutron-transmutation-doped semi-insulating GaAs
2. Infrared absorption properties of theEL2 and the isolatedAsGadefects in neutron-transmutation-doped GaAs: Generation of anEL2-like defect
3. Theoretical Evidence for an Optically Inducible Structural Transition of the Isolated As Antisite in GaAs: Identification and Explanation ofEL2?
4. The EL2 Defect in GaAs: Some Recent Developments
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