Model calculation of nitrogen properties in III-IV compounds
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.33.2701/fulltext
Reference32 articles.
1. Isoelectronic Traps Due to Nitrogen in Gallium Phosphide
2. Theory of the Exciton Bound to an Isoelectronic Trap in GaP
3. Toward a Theory of Isoelectronic Impurities in Semiconductors
4. The binding of electrons by nitrogen pairs in GaP
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