Strain-induced band-gap engineering of graphene monoxide and its effect on graphene-Reference-Cited by-同舟云学术

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Strain-induced band-gap engineering of graphene monoxide and its effect on graphene

Published:2013-02-13 Issue:8 Volume:87 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Pu H. H.,Rhim S. H.,Hirschmugl C. J.,Gajdardziska-Josifovska M.,Weinert M.,Chen J. H.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.87.085417/fulltext

Reference30 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Ultrahigh electron mobility in suspended graphene

3. High-speed graphene transistors with a self-aligned nanowire gate

4. High-On/Off-Ratio Graphene Nanoconstriction Field-Effect Transistor

5. Graphene Field-Effect Transistors with High On/Off Current Ratio and Large Transport Band Gap at Room Temperature

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