High-On/Off-Ratio Graphene Nanoconstriction Field-Effect Transistor-Reference-Cited by-同舟云学术

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High-On/Off-Ratio Graphene Nanoconstriction Field-Effect Transistor

Published:2010-10-27 Issue:23 Volume:6 Page:2748-2754
ISSN:1613-6810
Container-title:Small
language:en
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Author:

Lu Ye,Goldsmith Brett,Strachan Douglas R.,Lim Jong Hsien,Luo Zhengtang,Johnson A. T. Charlie

Publisher

Wiley

Subject

Biomaterials,Biotechnology,General Materials Science,General Chemistry

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/smll.201001324/fullpdf

Reference44 articles.

1. The rise of graphene

2. Ultrahigh electron mobility in suspended graphene

3. Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer

4. Intrinsic and extrinsic performance limits of graphene devices on SiO2

5. A Graphene Field-Effect Device

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5. Graphene Strain-Effect Transistor with Colossal ON/OFF Current Ratio Enabled by Reversible Nanocrack Formation in Metal Electrodes on Piezoelectric Substrates;Nano Letters;2023-03-30

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