Switching of exciton character in double InGaN/GaN quantum wells-Reference-Cited by-同舟云学术

Switching of exciton character in double InGaN/GaN quantum wells

Published:2018-10-04 Issue:16 Volume:98 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Suski T.,Staszczak G.,Korona K. P.,Lefebvre P.,Monroy E.,Drozdz P. A.,Muzioł G.,Skierbiszewski C.,Kulczykowski M.,Matuszewski M.,Grzanka E.,Grzanka S.,Pieniak K.,Gibasiewicz K.,Khachapuridze A.,Smalc-Koziorowska J.,Marona L.,Perlin P.

Funder

Narodowe Centrum Nauki

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.98.165302/fulltext

Reference43 articles.

1. Stimulated Scattering of Indirect Excitons in Coupled Quantum Wells: Signature of a Degenerate Bose-Gas of Excitons

2. Excitonic switches operating at around 100 K

3. Spontaneous coherence in a cold exciton gas

4. Photon Storage with Nanosecond Switching in Coupled Quantum Well Nanostructures

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