Resonant-Raman-scattering study of disorder effects inAlxGa1−xAs alloys
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.44.8605/fulltext
Reference24 articles.
1. Infrared reflectivity spectra and Raman spectra of Ga1−xAlxAs mixed crystals
2. Raman investigation of anharmonicity and disorder-induced effects inGa1−xAlxAsepitaxial layers
3. Raman Scattering in Alloy Semiconductors: "Spatial Correlation" Model
4. Localization and wave-vector conservation for optical phonons inAlxGa1−xAsand thin layers of GaAs
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1. Allowed and forbidden Raman scattering mechanisms for detection of coherent LO phonon and plasmon-coupled modes in GaAs;Physical Review B;2011-12-01
2. Evidence for compositional inhomogeneity in low In content (InGa)N obtained by resonant Raman scattering;Applied Physics Letters;1998-07-13
3. Raman scattering in ternary AlAsxSb1−x films;Solid State Communications;1998-07
4. Pressure dependence of the optic phonon energies inAlxGa1−xAs;Physical Review B;1996-09-15
5. Raman line asymmetry in alloys and in ion-implanted polar crystals;Physical Review B;1995-03-15
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