Raman scattering in ternary AlAsxSb1−x films
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference19 articles.
1. Energy bandgap and lattice constant contours of iii-v quaternary alloys of the form Ax By Cz D or ABx Cy Dz
2. Midwave (4 μm) infrared lasers and light‐emitting diodes with biaxially compressed InAsSb active regions
3. Negative Differential Resistance of Strain-Free InGaAs/AlAsSb Resonant Tunneling Barrier Structures Lattice-Matched to InP
4. Influence of As/Al and Sb/Al Gas Flow Ratios on Growth of $\bf AlAs_{1-{\ninmbi x}}Sb_{\ninmbi x}$ Alloys
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1. Epitaxial type-I and type-II InAs-AlAsSb core–shell nanowires on silicon;Applied Physics Letters;2021-11-08
2. Ab initiocalculation of the elastic properties and the lattice dynamics of the AlAsxSb1−xalloy under pressure;High Pressure Research;2011-06
3. Single AlxGa1−xAs nanowires probed by Raman spectroscopy;physica status solidi (b);2010-06-18
4. Self-Organized CdSSe Quantum Dots Thin Films;Journal of Nanoscience and Nanotechnology;2006-03-01
5. Raman scattering study of InGaAs/AlAsSb and InGaAs/AlAs/AlAsSb heterostructures;physica status solidi (a);2004-01
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