Role of interface roughness scattering in self-consistent resonant-tunneling-diode simulations
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.58.7279/fulltext
Reference22 articles.
1. RTD/HFET low standby power SRAM gain cell
2. 12 GHz clocked operation of ultralow power interband resonant tunneling diode pipelined logic gates
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