Effects of co-doping in semiconductors: CdTe
Author:
Funder
National Natural Science Foundation of China
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.104.245202/fulltext
Reference38 articles.
1. Codoping method for the fabrication of low-resistivity wide band-gap semiconductors in p-type GaN, p-type AlN and n-type diamond: prediction versus experiment
2. The thermodynamics of codoping: how does it work?
3. Design of shallow acceptors inZnO: First-principles band-structure calculations
4. Identification of Cu and Ag acceptors in CdTe
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