Formation and annihilation of various stacking-fault half units in dimer–adatom–stacking-fault structures on quenched Si(111) surfaces
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.61.15577/fulltext
Reference19 articles.
1. Structural analysis of Si(111)‐7×7 by UHV‐transmission electron diffraction and microscopy
2. Direct observation of the phase transition between the (7 × 7) and (1 × 1) structures of clean (111) silicon surfaces
3. An analytical reflection and emission UHV surface electron microscope
4. Evidence for the leading role of the stacking-fault triangle in the Si(111) 1×1→7×7 phase transition
5. Dynamic growth steps ofn×ndimer–adatom–stacking-fault domains on the quenched Si(111) surface
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1. Defects generation and annihilation in GaN grown on patterned silicon substrate;SPIE Proceedings;2013-03-27
2. Formation mechanism of the Si(111)7×7 reconstruction studied by scanning tunneling microscopy: Zipper-like restructuring in the sequential size changes of isolated single faulted-halves;Surface Science;2003-03
3. Stabilization mechanism of Si(111) 7×7 domain growth: important role of shared corner-holes;Surface Science;2001-09
4. Migration of Si adatom on strained Si(111) surfaces;Surface Science;2001-06
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