Two-level approach to saturation properties in semiconductor materials
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.37.1237/fulltext
Reference15 articles.
1. Absorption saturation in germanium, silicon, and gallium arsenide at 10.6 μm
2. Theory of nonlinear refraction near the band edge of a semiconductor
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5. Analysis of gain suppression in undoped injection lasers
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